Absorption measurements in InSe : Ho single crystal under an electric field

ATEŞ A., Gurbulak B., Yildirim M., Tuzemen S.

CZECHOSLOVAK JOURNAL OF PHYSICS, cilt.54, sa.3, ss.377-385, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 54 Sayı: 3
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1023/b:cjop.0000018134.99750.18
  • Dergi Adı: CZECHOSLOVAK JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.377-385
  • Atatürk Üniversitesi Adresli: Evet

Özet

InSe:Ho single crystal was grown by Bridgman-Stockberger method. Electric field effects on the absorption measurements have been investigated as a function of temperature in InSe:Ho single crystal. The absorption edge shifted towards longer wavelengths and a decrease of intensity in absorption spectra occurred under an electric field of 7.5 kV/cm. Using absorption measurements, steepness parameter and Urbach energy were calculated under electric field. Applied electric field caused an increase in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.322 and 1.301 eV for zero voltage and 1.245 and 1.232 eV for applied electric field, respectively.