Convertibility of conductivity type in reactively sputtered ZnO thin films

Tuzemen S., Dogan S., ATEŞ A., Yildirim M., XİONG G., WİLKİNSON J., ...Daha Fazla

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, cilt.195, sa.1, ss.165-170, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 195 Sayı: 1
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/pssa.200306290
  • Dergi Adı: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.165-170
  • Atatürk Üniversitesi Adresli: Evet

Özet

Possible negative-U behavior of the V-O donor may explain rather unusual free carrier properties in as-sputtered ZnO thin films grown at extremely Zn-rich conditions. V-O can act as a source of free electron concentration at sample temperatures above 210 K. Below this temperature it changes its charge state to an inactive neutral charge state where it cannot act as a donor because of a thermal barrier with a threshold temperature of 170-210 K. The thermal barrier for an electron to go to neutral charge state from positive charge state is approximately 162 meV. Material can be converted to p-type by annealing V-O centers. O-rich growth conditions with low [V-O] may result in p-type conductivity.