Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method

ERDOĞAN E., KUNDAKÇİ M.

MICROELECTRONIC ENGINEERING, cilt.207, ss.15-18, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 207
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.mee.2018.12.010
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.15-18
  • Anahtar Kelimeler: InGaN growth, Thin films, Sputtering technique, Substrate temperature, Silicon substrate, INXGA1-XN FILMS, GROWTH, SINGLE
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at 500 degrees C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed.