Temperature Dependent Electrical Characteristics Of Cu/CuS/n-Si/Au-Sb Structure Deposited By SILAR Method

Guzeldir B., Saglam M., Ates A.

1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Türkiye, 12 - 15 Mayıs 2011, cilt.1400, ss.56-59 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1400
  • Doi Numarası: 10.1063/1.3663085
  • Basıldığı Şehir: Antalya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.56-59
  • Atatürk Üniversitesi Adresli: Evet

Özet

We have reported a study of the I-V characteristics of Cu/CuS/n-Si/Au-Sb sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. A decrease in the barrier height, an increase in the ideality factor and a nonlinearity in the activation energy plot with a decrease in temperature have been seen. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependence of the I-V characteristics of the Cu/CuS/n-Si/Au-Sb structure can reveal the existence of Gaussian distribution. The mean barrier height and the Richardson constant values are obtained from the modified Richardson plot.