Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes

Duman S., Gurbulak B., Dogan S., Tekle T. B.

Physica E: Low-Dimensional Systems and Nanostructures, cilt.42, sa.7, ss.1958-1962, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 7
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.physe.2010.02.017
  • Dergi Adı: Physica E: Low-Dimensional Systems and Nanostructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1958-1962
  • Anahtar Kelimeler: GaSe, Schottky diodes, Current-Voltage characteristic, Barrier height, Ideality factor, SERIES RESISTANCE, LATERAL INHOMOGENEITIES, VOLTAGE CHARACTERISTICS, HEIGHT INHOMOGENEITY, IDEALITY FACTORS, CONTACTS, SI, CAPACITANCE, ADMITTANCE, PARAMETERS
  • Atatürk Üniversitesi Adresli: Evet

Özet

Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current-voltage and capacitance-voltage measurements at room temperature. Schottky barrier height and ideality factor values were determined from current-voltage characteristics of identically prepared twenty Ag/p-GaSe:Gd Schottky barrier diodes. By applying thermionic emission theory, the obtained barrier height and ideality factor values varied from 0.69 to 0.85 eV, and from 1.13 to 1.74, respectively. The homogeneous barrier height of Schottky barrier diodes was found to be 0.83 eV from the linear relationship between barrier height and ideality factor values. (C) 2010 Elsevier B.V. All rights reserved.