Capacitance and conductance-frequency characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode

Duman S., Gurbulak B., Dogan S., Turut A.

Vacuum, cilt.85, sa.8, ss.798-801, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 8
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.vacuum.2010.11.018
  • Dergi Adı: Vacuum
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.798-801
  • Anahtar Kelimeler: Schottky barrier diode, GaSe, Interface states, Layered semiconductor, INTERFACE-STATE DENSITY, EXCESS CAPACITANCE, SEMICONDUCTOR, ADMITTANCE, DEPENDENCE, CONTACT, HEIGHT
  • Atatürk Üniversitesi Adresli: Evet

Özet

The Schottky barrier height (SBH) values have been obtained from the reverse bias capacitance-voltage (C-V) characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode (SBD) in the temperature range of 180-320 K. The forward bias capacitance-frequency (C-f) and conductance-frequency (G-f) measurements of Au-Sb/p-GaSe:Gd SBD have been carried out from 0 to 1.00 V with steps of 0.05 V. whereby the energy distribution of the interface states and their relaxation time have been determined from these characteristics. It has been seen that there is a good agreement between the experimental and theoretical C-f and G-f values. Also, the capacitance values obtained from C-f measurements have shown almost a plateau up to a certain value of frequency, then, have decreased. It has been seen that the interface state density has a very small density distribution range (6.02 x 10(10)-6.80 x 10(10) cm(-2) eV(-1)) in the energy range of (0.21-E(v))-(1.21-E(v)) eV with bias from the midgap towards the top of the valence band. The interface state density values calculated for Au-Sb/p-GaSe:Gd SBD are rather low than those given in the literature. (C) 2010 Elsevier Ltd. All rights reserved.