The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films

Kundakci M.

PHYSICA B-CONDENSED MATTER, cilt.406, ss.2953-2961, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 406
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.physb.2011.04.027
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2953-2961
  • Atatürk Üniversitesi Adresli: Evet

Özet

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 degrees C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current-Voltage (I-V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm(2) light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300-470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS2/In2S3 films. (C) 2011 Elsevier B.V. All rights reserved.