Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe

Gurbulak B., Yildirim M., Ates A., Dogan S., Coskun C., Yogurtcu Y.

Physica Scripta, cilt.62, sa.1, ss.92-96, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 62 Sayı: 1
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1238/physica.regular.062a00092
  • Dergi Adı: Physica Scripta
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.92-96
  • Atatürk Üniversitesi Adresli: Evet

Özet

Magnetoresistance and Hall effect measurements were carried out for Ho doped n-InSe (n-InSe:Ho) sample in the temperature range 10-340 K, in which the sample exhibits transverse magnetoresistance (MJ⊥B) and longitudinal magnetoresistance (MJ//B) effect. The fit to a temperature power law T-βgives MJ⊥B ∝T-1.07and MJ//B ∝T-1.11 in the range 10-340 K for n-InSe:Ho. The transverse magnetoresistance coefficient of InSe:Ho in the temperature range 10-340 K is much greater than that of the reference n-InSe sample. As the temperature increases, the carrier concentration in the n-InSe:Ho sample increases between 10-340 K. Impurity energy levels calculated from In(p/T3/2) vs 103/T plot for n-InSe:Ho in the range 10-40 K, 40-240 K and 260-340 K are Ec-69 meV, Ec-264 meV and Ec-568 meV, respectively. The electron Hall mobility of the n-InSe:Ho sample decreases, as μH ∝ T-2.35 for 140-340 K. The Hall mobility and the carrier concentration of the n-InSe:Ho sample increase with increasing temperature in the range 10-340 K.