Temperature dependence of magnetoresistance in neutron-irradiated and unirradiated high resistivity p-type silicon

YILDIRIM M., EFEOĞLU H., ABAY B., YOĞURTÇU Y. K.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, cilt.153, sa.2, ss.473-480, 1996 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 153 Sayı: 2
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1002/pssa.2211530222
  • Dergi Adı: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
  • Sayfa Sayıları: ss.473-480
  • Atatürk Üniversitesi Adresli: Evet

Özet

The temperature dependence of the transverse magnetoresistance in irradiated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated [001] and [110] samples increases with decreasing sample temperature in the range from 160 to 290 K, however, this behavior is reversed below 160 K. It is proposed that this reversal is due to the double injection effect. The magnetoresistance coefficient for the irradiated [001] sample increases with decreasing sample temperature in the range of 120 to 290 K and is greater than that for the unirradiated [001] sample. This result can be explained by increased scattering due to the increased number of defects produced by irradiation. On the other hand, the magnetoresistance coefficient for the unirradiated [110] sample is found to be greater than that of the unirradiated [001] sample.