JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.146, 2020 (SCI-Expanded)
Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal-interfacial layer-semiconductor diodes with and without anodic surface passivation are investigated by the capacitancevoltage (C-V) and conductance-voltage (G/omega-V) characteristics. The measurements were performed at various voltages from -2 V to 2 V in the frequency range from 50 kHz to 1 MHz at room temperature and in the dark. The barrier height, concentration of acceptor atoms, and diffusion potential of these diodes were determined from the linear C-2-V plots. The barrier heights increase for the MS and MIS diodes with anodic surface passivation. Furthermore, the series resistance and interface state density of the diodes were obtained by the Hill-Coleman method and the Nicollian-Goetzberger method, respectively. It is found that the anodic passivation process has a positive effect on these parameters.