GÜL, F. And EFEOĞLU, H. 2017. ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior. CERAMICS INTERNATIONAL , vol.43, no.14 , 10770-10775.

GÜL, F., & EFEOĞLU, H., (2017). ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior. CERAMICS INTERNATIONAL , vol.43, no.14, 10770-10775.

GÜL, Fatih, And Hasan EFEOĞLU. "ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior," CERAMICS INTERNATIONAL , vol.43, no.14, 10770-10775, 2017

GÜL, Fatih And EFEOĞLU, Hasan. "ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior." CERAMICS INTERNATIONAL , vol.43, no.14, pp.10770-10775, 2017

GÜL, F. And EFEOĞLU, H. (2017) . "ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior." CERAMICS INTERNATIONAL , vol.43, no.14, pp.10770-10775.

@article{article, author={Fatih GÜL And author={Hasan EFEOĞLU}, title={ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior}, journal={CERAMICS INTERNATIONAL}, year=2017, pages={10770-10775} }