A. TÜRÜT Et Al. , "Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17, pp.22680-22688, 2021
TÜRÜT, A. Et Al. 2021. Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17 , 22680-22688.
TÜRÜT, A., Karabulut, A., & EFEOĞLU, H., (2021). Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17, 22680-22688.
TÜRÜT, ABDULMECİT, Abdulkerim Karabulut, And Hasan EFEOĞLU. "Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17, 22680-22688, 2021
TÜRÜT, ABDULMECİT Et Al. "Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17, pp.22680-22688, 2021
TÜRÜT, A. Karabulut, A. And EFEOĞLU, H. (2021) . "Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.17, pp.22680-22688.
@article{article, author={ABDULMECİT TÜRÜT Et Al. }, title={Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2021, pages={22680-22688} }