Zhang, J. Et Al. 1993. Structural defects and their electrical activity in germanium implanted silicon. Nuclear Inst. and Methods in Physics Research, B , vol.74 , 127-130.

Zhang, J., Fan, T., Gwilliam, R., Hemment, P., Wen, J., Qian, Y., ... Efeoglu, H.(1993). Structural defects and their electrical activity in germanium implanted silicon. Nuclear Inst. and Methods in Physics Research, B , vol.74, 127-130.

Zhang, J.P. Et Al. "Structural defects and their electrical activity in germanium implanted silicon," Nuclear Inst. and Methods in Physics Research, B , vol.74, 127-130, 1993

Zhang, J.P. Et Al. "Structural defects and their electrical activity in germanium implanted silicon." Nuclear Inst. and Methods in Physics Research, B , vol.74, pp.127-130, 1993

Zhang, J. Et Al. (1993) . "Structural defects and their electrical activity in germanium implanted silicon." Nuclear Inst. and Methods in Physics Research, B , vol.74, pp.127-130.

@article{article, author={J.P. Zhang Et Al. }, title={Structural defects and their electrical activity in germanium implanted silicon}, journal={Nuclear Inst. and Methods in Physics Research, B}, year=1993, pages={127-130} }