TURUT, A. Et Al. 2017. Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.19 , 424-433.

TURUT, A., KARABULUT, A., & EFEOĞLU, H., (2017). Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.19, 424-433.

TURUT, ABDULMECİT, ABDULKERİM KARABULUT, And Hasan EFEOĞLU. "Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.19, 424-433, 2017

TURUT, ABDULMECİT Et Al. "Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.19, pp.424-433, 2017

TURUT, A. KARABULUT, A. And EFEOĞLU, H. (2017) . "Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.19, pp.424-433.

@article{article, author={ABDULMECİT TURUT Et Al. }, title={Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2017, pages={424-433} }