Duman, S. Et Al. 2008. The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes. Applied Physics A: Materials Science and Processing , vol.91, no.2 , 337-340.

Duman, S., Dogan, S., Guerbulak, B., & Tueruet, A., (2008). The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes. Applied Physics A: Materials Science and Processing , vol.91, no.2, 337-340.

Duman, Bekir Et Al. "The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes," Applied Physics A: Materials Science and Processing , vol.91, no.2, 337-340, 2008

Duman, Bekir Et Al. "The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes." Applied Physics A: Materials Science and Processing , vol.91, no.2, pp.337-340, 2008

Duman, S. Et Al. (2008) . "The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes." Applied Physics A: Materials Science and Processing , vol.91, no.2, pp.337-340.

@article{article, author={Bekir GÜRBULAK Et Al. }, title={The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes}, journal={Applied Physics A: Materials Science and Processing}, year=2008, pages={337-340} }