Atasoyu, M. Et Al. 2019. Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs. MICROELECTRONICS JOURNAL , vol.89 , 30-36.

Atasoyu, M., Altun, M., & Özoğuz, İ. S., (2019). Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs. MICROELECTRONICS JOURNAL , vol.89, 30-36.

Atasoyu, Mesut, Mustafa Altun, And İsmail Serdar Özoğuz. "Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs," MICROELECTRONICS JOURNAL , vol.89, 30-36, 2019

Atasoyu, Mesut Et Al. "Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs." MICROELECTRONICS JOURNAL , vol.89, pp.30-36, 2019

Atasoyu, M. Altun, M. And Özoğuz, İ. S. (2019) . "Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs." MICROELECTRONICS JOURNAL , vol.89, pp.30-36.

@article{article, author={Mesut ATASOYU Et Al. }, title={Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs}, journal={MICROELECTRONICS JOURNAL}, year=2019, pages={30-36} }