Güzeldir, B. Et Al. 2022. Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer. PHYSICA B: CONDENSED MATTER , no.647 , 414364.

Güzeldir, B., Baltakesmez, A., & Sağlam, M., (2022). Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer. PHYSICA B: CONDENSED MATTER , no.647, 414364.

Güzeldir, Betül, Ali BALTAKESMEZ, And Mustafa SAĞLAM. "Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer," PHYSICA B: CONDENSED MATTER , no.647, 414364, 2022

Güzeldir, Betül Et Al. "Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer." PHYSICA B: CONDENSED MATTER , no.647, pp.414364, 2022

Güzeldir, B. Baltakesmez, A. And Sağlam, M. (2022) . "Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer." PHYSICA B: CONDENSED MATTER , no.647, p.414364.

@article{article, author={Betül GÜZELDİR Et Al. }, title={Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer}, journal={PHYSICA B: CONDENSED MATTER}, year=2022, pages={414364} }