Baltakesmez, A. Et Al. 2020. Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118 .

Baltakesmez, A., Tekmen, S., & GÜZELDİR, B., (2020). Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118.

Baltakesmez, A., S. Tekmen, And Betül GÜZELDİR. "Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118, 2020

Baltakesmez, A. Et Al. "Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118, 2020

Baltakesmez, A. Tekmen, S. And GÜZELDİR, B. (2020) . "Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118.

@article{article, author={A. Baltakesmez Et Al. }, title={Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2020}