ÖZAKIN, O. Et Al. 2019. Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature. 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019) , (Ağrı, Turkey), 7.

ÖZAKIN, O., AYKAÇ, C., GÜZELDİR, B., & SAĞLAM, M., (2019). Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature . 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019) (pp.7). Ağrı, Turkey

ÖZAKIN, Oğuzhan Et Al. "Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature," 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Turkey, 2019

ÖZAKIN, Oğuzhan Et Al. "Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature." 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019) , Ağrı, Turkey, pp.7, 2019

ÖZAKIN, O. Et Al. (2019) . "Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature." 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019) , Ağrı, Turkey, p.7.

@conferencepaper{conferencepaper, author={Oğuzhan ÖZAKIN Et Al. }, title={Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature}, congress name={4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019)}, city={Ağrı}, country={Turkey}, year={2019}, pages={7} }