Korucu, D. Et Al. 2012. Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5 , 480-485.

Korucu, D., EFEOĞLU, H., Turut, A., & Altindal, S., (2012). Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, 480-485.

Korucu, D. Et Al. "Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, 480-485, 2012

Korucu, D. Et Al. "Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, pp.480-485, 2012

Korucu, D. Et Al. (2012) . "Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, pp.480-485.

@article{article, author={D. Korucu Et Al. }, title={Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2012, pages={480-485} }