Ateş, A. Et Al. 2011. Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method. World Congress on Engineering and Technology (CET) , (Shangai, China), 17-20.

Ateş, A., GÜZELDİR, B., SAĞLAM, M., & DURAK, R., (2011). Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method . World Congress on Engineering and Technology (CET) (pp.17-20). Shangai, China

Ateş, Aytünç Et Al. "Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method," World Congress on Engineering and Technology (CET), Shangai, China, 2011

Ateş, Aytünç Et Al. "Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method." World Congress on Engineering and Technology (CET) , Shangai, China, pp.17-20, 2011

Ateş, A. Et Al. (2011) . "Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method." World Congress on Engineering and Technology (CET) , Shangai, China, pp.17-20.

@conferencepaper{conferencepaper, author={Aytünç Ateş Et Al. }, title={Chracteristic parameters of CdS thin film and C-V properties of Cd/CdS/GaAs/ln sandiwich structure as a function of frequency grown by SILAR Method}, congress name={World Congress on Engineering and Technology (CET)}, city={Shangai}, country={China}, year={2011}, pages={17-20} }