BATI, B. Et Al. 2000. On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact. PHYSICA SCRIPTA , vol.61, no.2 , 209-212.

BATI, B., Nuhoğlu, Ç., SAĞLAM, M., Ayyıldız, E., & Türüt, A., (2000). On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact. PHYSICA SCRIPTA , vol.61, no.2, 209-212.

BATI, Bahri Et Al. "On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact," PHYSICA SCRIPTA , vol.61, no.2, 209-212, 2000

BATI, Bahri Et Al. "On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact." PHYSICA SCRIPTA , vol.61, no.2, pp.209-212, 2000

BATI, B. Et Al. (2000) . "On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact." PHYSICA SCRIPTA , vol.61, no.2, pp.209-212.

@article{article, author={Bahri BATI Et Al. }, title={On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact}, journal={PHYSICA SCRIPTA}, year=2000, pages={209-212} }