Temircl, C. Et Al. 2001. High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process. APPLIED SURFACE SCIENCE , vol.172 , 1-7.

Temircl, C., BATI, B., SAĞLAM, M., & Türüt, A., (2001). High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process. APPLIED SURFACE SCIENCE , vol.172, 1-7.

Temircl, C Et Al. "High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process," APPLIED SURFACE SCIENCE , vol.172, 1-7, 2001

Temircl, C Et Al. "High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process." APPLIED SURFACE SCIENCE , vol.172, pp.1-7, 2001

Temircl, C. Et Al. (2001) . "High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process." APPLIED SURFACE SCIENCE , vol.172, pp.1-7.

@article{article, author={C Temircl Et Al. }, title={High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process}, journal={APPLIED SURFACE SCIENCE}, year=2001, pages={1-7} }