GÜZELDİR, B. Et Al. 2011. Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures. World Congress on Engineering and Technology (CET) , (Shangai, China), 24-28.

GÜZELDİR, B., SAĞLAM, M., & Ateş, A., (2011). Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures . World Congress on Engineering and Technology (CET) (pp.24-28). Shangai, China

GÜZELDİR, Betül, Mustafa SAĞLAM, And Aytünç Ateş. "Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures," World Congress on Engineering and Technology (CET), Shangai, China, 2011

GÜZELDİR, Betül Et Al. "Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures." World Congress on Engineering and Technology (CET) , Shangai, China, pp.24-28, 2011

GÜZELDİR, B. SAĞLAM, M. And Ateş, A. (2011) . "Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures." World Congress on Engineering and Technology (CET) , Shangai, China, pp.24-28.

@conferencepaper{conferencepaper, author={Betül GÜZELDİR Et Al. }, title={Determination of the laterally homogeneous barrier height of Cd/CdS/n-GaAs/In structures}, congress name={World Congress on Engineering and Technology (CET)}, city={Shangai}, country={China}, year={2011}, pages={24-28} }