CINAR, K. Et Al. 2014. Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.300, no.3 , 1113-1120.

CINAR, K., AYDOĞAN, Ş., & Coskun, C., (2014). Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.300, no.3, 1113-1120.

CINAR, Kübra, Şakir AYDOĞAN, And C. Coskun. "Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation," JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.300, no.3, 1113-1120, 2014

CINAR, Kübra Ç. Et Al. "Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation." JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.300, no.3, pp.1113-1120, 2014

CINAR, K. AYDOĞAN, Ş. And Coskun, C. (2014) . "Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation." JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.300, no.3, pp.1113-1120.

@article{article, author={Kübra ÇINAR DEMİR Et Al. }, title={Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation}, journal={JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY}, year=2014, pages={1113-1120} }