AGAYEVA, S. K. Et Al. 1999. Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors,. Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri). .

AGAYEVA, S. K., ALİEA, M. K., GÜRBULAK, B., & YOĞURTÇU, Y. K., (1999). Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors, . Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri).

AGAYEVA, S Et Al. "Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors,," Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri)., 1999

AGAYEVA, S K. Et Al. "Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors,." Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri). , 1999

AGAYEVA, S. K. Et Al. (1999) . "Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors,." Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri). .

@conferencepaper{conferencepaper, author={S KH AGAYEVA Et Al. }, title={Anomaly of temperature Behaviour of Electron Spectra of TlInS2 Doped by Er near The Fundamental Absorptiınb Edge, Third International School Conferences, physical problems in Material Science of Semiconductors,}, congress name={Chernivtsi, 7-11 of Septenber, 1999 UKRAINE (Sözlü Bildiri).}, city={}, country={}, year={1999}}