ASIL, H. Et Al. 2009. Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics. APPLIED PHYSICS LETTERS , vol.94, no.25 .

ASIL, H., GÜR, E., CINAR, K., & COSKUN, C., (2009). Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics. APPLIED PHYSICS LETTERS , vol.94, no.25.

ASIL, H. Et Al. "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics," APPLIED PHYSICS LETTERS , vol.94, no.25, 2009

ASIL, H. Et Al. "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics." APPLIED PHYSICS LETTERS , vol.94, no.25, 2009

ASIL, H. Et Al. (2009) . "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics." APPLIED PHYSICS LETTERS , vol.94, no.25.

@article{article, author={H. ASIL Et Al. }, title={Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics}, journal={APPLIED PHYSICS LETTERS}, year=2009}