Fritah, A. Et Al. 2019. Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature. JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6 , 3692-3698.

Fritah, A., Dehimi, L., Pezzimenti, F., Saadoune, A., & ABAY, B., (2019). Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature. JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, 3692-3698.

Fritah, A. Et Al. "Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature," JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, 3692-3698, 2019

Fritah, A. Et Al. "Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature." JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, pp.3692-3698, 2019

Fritah, A. Et Al. (2019) . "Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature." JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, pp.3692-3698.

@article{article, author={A. Fritah Et Al. }, title={Analysis of I-V-T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature}, journal={JOURNAL OF ELECTRONIC MATERIALS}, year=2019, pages={3692-3698} }