Kocyigit, A. Et Al. 2017. Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.28, no.8 , 5880-5886.

Kocyigit, A., Orak, I., AYDOĞAN, Ş., ÇALDIRAN, Z., & TÜRÜT, A., (2017). Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.28, no.8, 5880-5886.

Kocyigit, A. Et Al. "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.28, no.8, 5880-5886, 2017

Kocyigit, A. Et Al. "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.28, no.8, pp.5880-5886, 2017

Kocyigit, A. Et Al. (2017) . "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.28, no.8, pp.5880-5886.

@article{article, author={A. Kocyigit Et Al. }, title={Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2017, pages={5880-5886} }