TÜZEMEN, S. And BROZEL, M. 1992. PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY. MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology , (San Francisco, United States Of America), 99-105.

TÜZEMEN, S., & BROZEL, M., (1992). PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY . MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology (pp.99-105). San Francisco, United States Of America

TÜZEMEN, Sebahattin, And MR BROZEL. "PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY," MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology, San Francisco, United States Of America, 1992

TÜZEMEN, Sebahattin And BROZEL, MR. "PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY." MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology , San Francisco, United States Of America, pp.99-105, 1992

TÜZEMEN, S. And BROZEL, M. (1992) . "PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY." MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology , San Francisco, United States Of America, pp.99-105.

@conferencepaper{conferencepaper, author={Sebahattin TÜZEMEN And author={MR BROZEL}, title={PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY}, congress name={MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology}, city={San Francisco}, country={United States Of America}, year={1992}, pages={99-105} }