Özakın, O. Et Al. 2022. Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature. JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33 , 14627-14643.

Özakın, O., Sağlam, M., & Güzeldir, B., (2022). Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature. JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33, 14627-14643.

Özakın, Oğuzhan, Mustafa SAĞLAM, And Betül GÜZELDİR. "Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature," JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33, 14627-14643, 2022

Özakın, Oğuzhan Et Al. "Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature." JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33, pp.14627-14643, 2022

Özakın, O. Sağlam, M. And Güzeldir, B. (2022) . "Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature." JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33, pp.14627-14643.

@article{article, author={Oğuzhan ÖZAKIN Et Al. }, title={Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature}, journal={JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS}, year=2022, pages={14627-14643} }