ÖZAKIN, O. Et Al. 2019. Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature. International Journal of Scientific & Engineering Research , vol.10, no.9 , 46-48.

ÖZAKIN, O., Bayram, Ö., AYKAÇ, C., GÜZELDİR, B., & SAĞLAM, M., (2019). Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature. International Journal of Scientific & Engineering Research , vol.10, no.9, 46-48.

ÖZAKIN, Oğuzhan Et Al. "Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature," International Journal of Scientific & Engineering Research , vol.10, no.9, 46-48, 2019

ÖZAKIN, Oğuzhan Et Al. "Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature." International Journal of Scientific & Engineering Research , vol.10, no.9, pp.46-48, 2019

ÖZAKIN, O. Et Al. (2019) . "Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature." International Journal of Scientific & Engineering Research , vol.10, no.9, pp.46-48.

@article{article, author={Oğuzhan ÖZAKIN Et Al. }, title={Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature}, journal={International Journal of Scientific & Engineering Research}, year=2019, pages={46-48} }