Growth and Characterization of InGaN Thin Films on Si (111) Substrate by RF Magnetron Sputtering: N-2 Gas Flow Effect


Erdogan E., KUNDAKÇİ M. , KASAPOĞLU A. E. , GÜR E.

33rd International Physics Congress of the Turkish-Physical-Society (TPS), Bodrum, Turkey, 6 - 10 September 2017, vol.1935 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1935
  • Doi Number: 10.1063/1.5026007
  • City: Bodrum
  • Country: Turkey

Abstract

In this study, effect of N-2 gas flow rates on structural, optical and morphological properties of InGaN thin films grown by Radio Frequency Magnetron Sputtering (RFMS) method on n-type silicon (111) substrate have been investigated. X-ray diffraction (XRD) measurements confirmed that InGaN thin films have been successfully deposited and exhibited diffraction peak belong to (002) plane for each film. The surface roughness of InGaN thin films has been determined by using Atomic Force Microscopy (AFM). The energy band gap of the film was determined by using the optical absorption spectra around 2.49 and 2.47 eV for each film.