Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing


GÜR E. , ASIL H., COSKUN C., TÜZEMEN S. , Meral K., ONGANER Y. , ...More

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.266, no.9, pp.2021-2026, 2008 (Journal Indexed in SCI) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 266 Issue: 9
  • Publication Date: 2008
  • Doi Number: 10.1016/j.nimb.2008.03.198
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Page Numbers: pp.2021-2026

Abstract

High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 x 10(12) e(-)/cm(2). The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the El produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEL (c) 2008 Elsevier B.V. All rights reserved.