The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

POLİTANO A., Chiarello G., SAMNAKAY R., LİU G., GÜRBULAK B., Duman S., ...Daha Fazla

NANOSCALE, cilt.8, sa.16, ss.8474-8479, 2016 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 16
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1039/c6nr01262k
  • Dergi Adı: NANOSCALE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.8474-8479
  • Atatürk Üniversitesi Adresli: Evet

Özet

We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O-2, N-2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.