Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)\u2020


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Acar M. , Ertuğrul M. , Gür E. , Mobtakery S.

Hittite Journal of Science & Engineering, vol.8, no.1, pp.1-5, 2021 (Refereed Journals of Other Institutions)

  • Publication Type: Article / Article
  • Volume: 8 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.17350/hjse19030000206
  • Title of Journal : Hittite Journal of Science & Engineering
  • Page Numbers: pp.1-5

Abstract

Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on

2D/3D heterojunction based diverse devices without any restrictions, such as lattice compat-ibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Ra-man spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investi-gate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.