Silicon-doping influence on the crystalline, surface and optical features of cadmium oxide films deposited by sol-gel spin route

Turgut G., Kurt M. S., ERTUĞRUL M., İSKENDEROĞLU D., Duman S., GÜRBULAK B.

OPTIK, cilt.165, ss.310-318, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 165
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.ijleo.2018.03.138
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.310-318
  • Anahtar Kelimeler: Cadmium oxide, Si-doping, Sol-gel, Physical qualities, THIN-FILMS, ELECTRICAL-PROPERTIES, CDO, ZNO, GROWTH, BORON
  • Atatürk Üniversitesi Adresli: Evet

Özet

This is the first study on Si-contributed CdO films fabricated via sol-gel process. Si-doping impact on the crystalline, topographic and optical qualities of cadmium oxide has been searched with XRD, SEM, AFM and UV/vis spectrophotometer. The whole films were polycrystalline with (111) preferential direction and the crystalline degree of CdO depended on Si-contribution effect. The crystallite size of undoped-CdO incessantly decreased with Si-content, however dislocation density increased with Si-level. The spherical CdO granules were nanoscale and their sizes varied between 20-170 nm. The RMS roughness values of films changed between 5.84 nm-40.5 nm. The optical gap value of undoped-CdO continuously declined from 2.59 eV to 2.39 eV with increasing Si-content, while the Urbach energy increased from 350 meV to 468 meV with Si-level. These results reveal that the level of Si-doping affect the features of cadmium oxide. (C) 2018 Elsevier GmbH. All rights reserved.