Investigation of the switching phenomena in Ga2Te3 single crystals

Aydogan S., Karacali T., YOGURTCU Y.

JOURNAL OF CRYSTAL GROWTH, vol.279, pp.110-113, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 279
  • Publication Date: 2005
  • Doi Number: 10.1016/j.jcrysgro.2005.01.106
  • Journal Name: JOURNAL OF CRYSTAL GROWTH
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.110-113
  • Keywords: crystal structure, Bridgman-Stockbarger crystal growth method, single crystal growth, Ga2Te3 single crystal, semiconducting III-V compounds, CHALCOGENIDE SEMICONDUCTORS, GLASSES, CONDUCTION, TLINTE2, TLINSE2
  • Ataturk University Affiliated: Yes

Abstract

Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman-Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140-300 K). The current-voltage (I- V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model. (c) 2005 Elsevier B.V. All rights reserved.