COMPARISON OF THE AS DEPOSITED NICR2O4: ZNO AND NIO:ZNO THIN FILMS TOGETHER WITH DEVICES GROWN BY RADIO FREQUENCY SPUTTERING TECHNIQUE


TURGUT E. , GÜR E. , YILDIRIM M. , SARITAŞ S.

MARDİN ARTUKLU INTERNATIONAL SCIENTIFIC RESEARCH CONGRESS, Mardin, Turkey, 23 September - 25 August 2019, pp.324-330

  • Publication Type: Conference Paper / Full Text
  • City: Mardin
  • Country: Turkey
  • Page Numbers: pp.324-330

Abstract

In this study, as-deposited and ZnO doped NiCr2O4, NiO thin films were grown under 30% oxygen partial pressure by Radio Frequency Magnetron Sputtering (RFMS) technique. The structural, optical and morphological properties of as-deposited and Zn dopped NiCr2O4, NiO films were investigated. X-Ray Diffraction (XRD) measurements has shown that doping with Zn changes the diffraction peak position. Again, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) measurements has shown a significant change of the surface morphologies by the Zn doping. Gas sensor properties of the films in the relatively high temperature (200-300 0C) were performed and comparison has been made by the device performances of the two different kind of films.