Comparison of the as deposited NiCr2O4:Al and NiO:AlThin Films Together withDevices Grown By Radio Frequency Sputtering Technique


SARITAŞ S. , TURGUT E. , YILDIRIM M. , GÜR E.

3rd International Conference on AdvancedEngineering Technologies, Bayburt, Turkey, 19 - 21 September 2019, pp.1221-1225

  • Publication Type: Conference Paper / Full Text
  • City: Bayburt
  • Country: Turkey
  • Page Numbers: pp.1221-1225

Abstract

In this study, as-deposited and Al doped NiCr2O4, NiO thin films were grown under 30% oxygen partial pressure by Radio Frequency Magnetron Sputtering (RFMS) technique. The structural, optical and morphological properties of as-deposited and Al dopped NiCr2O4, NiO films were investigated. X-Ray Diffraction (XRD) measurements has shown that doping with Al changes the diffraction peak position. Again, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) measurements has shown a significant change of the surface morphologies by the Al doping. Gas sensor properties of the films in the relatively high temperature (200-300 0C) were performed and comparison has been made by the device performances of the  two different kind of films.