Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes

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Atıf İçin Kopyala

DEMIR K. C., TEKLE T., GÜRBULAK B., AYDOĞAN Ş., Coskun C., EKİNCİ D.

RADIATION EFFECTS AND DEFECTS IN SOLIDS, cilt.171, ss.528-543, 2016 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 171
• Basım Tarihi: 2016
• Doi Numarası: 10.1080/10420150.2016.1217411
• Dergi Adı: RADIATION EFFECTS AND DEFECTS IN SOLIDS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.528-543
• Atatürk Üniversitesi Adresli: Evet

Özet

Mn-doped p-InSe semiconductor crystals were grown by Bridgman -Stockbarger technique. The crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fabricated Sn/InSe: Mn Schottky diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of diodes were investigated to determine the response of devices to electron irradiation with 9 MeV energy and 1.2x10(10) e-cm(-2) dose. After irradiation, the ideality factor and barrier height of the Sn/InSe: Mn Schottky diode were determined as 1.66 and 0.85 eV, respectively. Before irradiation, they were determined as 1.37 and 0.90 eV, respectively. It has been concluded that the radiation with high energy may contribute to form defects at the interface of the Sn/InSe:Mn device.