CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS
2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018