Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative study


Yılmaz M., Kocyigit A., Aydoğan Ş., İncekara Ü., Şahin Y., Kacus H.

Applied Physics A: Materials Science and Processing, cilt.126, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 126
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s00339-020-03828-4
  • Dergi Adı: Applied Physics A: Materials Science and Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Anahtar Kelimeler: Eosin y dye, Organic photodiode, Detectivity, Photoresponsivity, SENSITIZED SOLAR-CELL, PHOTOVOLTAIC PROPERTIES, VOLTAGE CHARACTERISTICS, ORGANIC PHOTODIODES, SCHOTTKY, PERFORMANCE, OXIDATION, FILMS, DIODE, TIO2
  • Atatürk Üniversitesi Adresli: Evet

Özet

We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si structures and demonstrated that both devices exhibited strong photodiode characteristics to the increasing light power depending on current-voltage (I-V) measurements. Furthermore, the XRD and SEM analyses of Eosin y film were performed to analyze structural and topographical features of the film. The electrical measurements of Eosin y/n-Si and Eosin y/p-Si photodiodes were carried out in both dark and under various illumination intensities in the range of 100-400 mW/cm(2). The main device parameters, such as ideality factor, barrier height, and responsivities of both devices, were determined from the I-V characteristics. The obtained photocurrent values in reverse biases are higher than the dark current at the same reverse bias for both Eosin y/n-Si and Eosin y/p-Si photodiodes. So, this confirmed that light produces photocurrent due to the formation of electron-hole pairs as a result of light absorption in the Eosin y film. Moreover, the C-V measurements were performed on both photodiodes to characterize capacitive performance of the Eosin y films. The fabricated photodiodes based on Eosin y thin films present great promise for future optoelectronic device applications.