Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals
Asian Journal of Chemistry, cilt.28, sa.6, ss.1389-1392, 2016 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 28 Sayı: 6
- Basım Tarihi: 2016
- Doi Numarası: 10.14233/ajchem.2016.19823
- Dergi Adı: Asian Journal of Chemistry
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.1389-1392
- Anahtar Kelimeler: Crystal structure, Differential inelastic scattering cross sections, Semiconductors
- Atatürk Üniversitesi Adresli: Evet
Özet
Because of the extensive usage of silicon and gallium arsenide semiconductor crystals, the differential inelastic scattering cross-sections at 59.5 keV have been measured for various scattering angles changing from 120 to 150 degrees by using an energy dispersive X-ray fluorescence spectrometer. The spectrometer includes an Am-241 radio isotopes as photon source and a Si(Li) detector. Experimental results of differential inelastic scattering cross-sections compared with theoretical results. We found a good agreement between experimental and theoretical values in the standard uncertainties. To our best of knowledge, these results are first data in the differential inelastic scattering cross-sections of silicon and gallium arsenide crystals.