Akademik Veri Yönetim Sistemi
Ceramics International, cilt.51, sa.17, ss.23068-23076, 2025 (SCI-Expanded, Scopus)
In this research, a Sn-doped hematite (α-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV–VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm−1 and 1500 cm−1. A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped α-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped α-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.