Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction


TEKMEN S., GÜR E. , ASIL H., CINAR K., COSKUN C., TÜZEMEN S.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.207, no.6, pp.1464-1467, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 207 Issue: 6
  • Publication Date: 2010
  • Doi Number: 10.1002/pssa.200925488
  • Title of Journal : PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Page Numbers: pp.1464-1467
  • Keywords: current-voltage characteristics, electronic transport, heterojunction, photoluminescence, II-VI semiconductor-to-semiconductor contact, EMITTING-DIODES, FILMS, ELECTRODEPOSITION, FABRICATION, GROWTH

Abstract

n-ZnO film grown by electrodeposition (ECD) on p-GaAs substrate was characterized by structural, optical, and electrical techniques. X-ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong c-axis (0002) preferential orientation. Photoluminescence (PL) measurements showed that the grown film has a strong and narrow ultraviolet (UV) emission indicating high-quality ZnO thin film. Current voltage (I-V) measurement of n-ZnO/p-GaAs heterojunction shows diode-like rectifying characteristics with an almost five-order rectification factor and a turn-on voltage of 2 V. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim