Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect | AVESİS

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Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect

ERDOĞAN E., KUNDAKÇİ M. , KASAPOĞLU A. E. , GÜR E.

American Journal Of Physics, 2018 (Refereed Journals of Other Institutions)

Publication Type: Article / Article
Publication Date: 2018
Doi Number: 10.1063/1.5026007
Title of Journal : American Journal Of Physics