PCFM’19 INTERNATİONAL CONFERENCE ON PHYSİCAL CHEMISTRY AND FUNCTİONAL MATERİALS, Nevşehir, Turkey, 25 - 27 July 2019, pp.226-231
In this study, NiO thin films and Al and Zn doped NiO thin films were grown with 30% oxygen partial pressure by using Radio Frequency (RF) sputtering technique. The structural and optical properties of NiO and Al and Zn dopped NiO films were investigated. In another phase of the study, X-Ray Diffraction (XRD) measurements of these semiconductor thin films between 20 and 70 degrees were obtained. It was observed that Al and Zn additives made on NiO thin films produced peaks at different angles (XRD) diffraction patterns. However, as a result of Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) measurements, surface morphology, which is of great importance for thin film gas sensor applications, has been observed to vary with the addition of different elements. In the final stage of the study, the gas sensor properties of the films in the high tempureture (200-300 0C) were examined. According to the results obtained; The gas sensor properties of NiO and Al and Zn doped NiO thin films were investigated and the changes made in the gas sensor properties were determined by determining the most suitable gas sensor type among these three different samples.