Synthesis and characterization of ZnO:Ni thin films grown by spray-deposition


İSKENDEROĞLU D., Guney H.

Ceramics International, cilt.43, sa.18, ss.16593-16599, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 43 Sayı: 18
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.ceramint.2017.09.047
  • Dergi Adı: Ceramics International
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.16593-16599
  • Anahtar Kelimeler: Raman, PL, ZnO:Ni, Optoelectronic, Spray pyrolysis, LITHIUM-ION BATTERIES, ZINC-OXIDE, PYROLYSIS METHOD, ELECTRICAL PARAMETERS, HIGHLY TRANSPARENT, NIO, NANOPARTICLES, TEMPERATURE, ANODE
  • Atatürk Üniversitesi Adresli: Evet

Özet

In the present study, nickel-doped zinc oxide thin films (ZnO:Ni) at different percentages (0-10%) were deposited on glass substrates by using a chemical spray technique. The effect of Ni concentration on the structural and optical properties of the ZnO:Ni thin films was investigated. The effect of Ni contents on the crystalline structure and optical properties of the films was systematically investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-vis, Photoluminescence spectra PL, and Raman spectrometry. The XRD analysis showed that both the undoped and Ni-doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The XRD analysis also showed that the films were well crystallized in wurtzite phase with the crystallites preferentially oriented towards (002) direction parallel to the c-axis. SEM study reveals the surface of NiZnO to be made of nanocrystalline particles. The SEM images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The band gap decreased up to the 7 at% Ni doping level, but the band gap increased after 10 at% Ni doping level. All thin films exhibited approximately 80% and above transmittance in the visible region. PL spectra of undoped and Ni-doped ZnO thin films showed some marked peaks at 376, 389, 494, and 515 nm. The obtained results revealed that the structures and optical properties of the films were greatly affected by doping levels. These films are useful as conducting layers in electro chromic and photovoltaic devices. Finally, all results were discussed in terms of the nickel doping concentration.