THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE

CİMİLLİ ÇATIR F. E., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Atatürk Üniversitesi Adresli: Evet