THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE

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CİMİLLİ ÇATIR F. E., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Tam Metin Bildiri)

• Yayın Türü: Bildiri / Tam Metin Bildiri
• Atatürk Üniversitesi Adresli: Evet